Central European Institute ofTechnology
BRNO I CZECH REPUBLIC
Atomic Layer Deposition (ALD)
Instrument description
Atomic Layer Deposition is a deposition technique for very thin layers with the thickness control down to a single atomic layer. It belongs to the CVD techniques family. The thickness precision is achieved by pulsed deposition, where first a metal-containing precursor is introduced into the chamber and after a short time (allowing for a monolayer adsorption) the chamber is pumped down. Following step is an exposure to the oxidizing precursor (for oxides) or nitrogen containing precursor (for nitrides). Thus, a monolayer of target material is grown.The metal-containing precursors are usually organometallic ones, for oxidation a water or oxygen plasma can be used, nitrida-tion is done using water or nitrogen plasma. To achieve the deposition in the ALD mode, sample is heated up to a certain temperature, for most processes being in the range 1 50 °C - 300 °C.
t: Ultratech-Cambridge Nanotech Fiji 200
ALD system for up to 8"samples, equipped with plasma generator.
Standard materials: Al203, AIN, Hf02, HfN,Ti02,TiN, Si02, SiN, other materials on request.
Fedtures:
• thermal deposition within range RT-500 °C
• 4 precursor lines, with possible upgrade to 6
• plasma-enhanced deposition (3 plasma gas lines)
expo mode for homogeneous deposition on high-aspect-ratio nanostructures
controlling software allows preparation/ /modification/storage of individual recipes
fully automatic programmable operation
Application
Al203 diffusion barrier deposition
■ ■ ■ 1 I 1 1 ■ ■ I 1 1 1 1 I ■ ■ 1 1 I 1 ■ ■ 1 I 1 1 1 ■ I ■ 1 1 1 I ■ ■ 1 1 I 1 I I—I—I—I—I—I—I—I—I—I—I—I—I—I—I—I—q    1.55 nm
Technical specification
General info:
Up to 8 inch sample size
Deposition uniformity 1.5 % (1 o) for Al203
sample process:
plasma chamber/generator
Delivery/Carrier system:
- solid, liquid and gas precursors heated up to 200 °C
- ALD Booster™ for low pressure precursors
- 3 x mass flow controlled plasma ines, 200 seem
m
purge/plasma gas lines
G
reactor chamber
with sample plate heated up to 500 °C
precursor trap
Deposition modes:
- high speed
- high aspect ratio
- plasma assisted
\
initial surface
st a o a *
_
Q aluminium Q carbon 0 hydrogen 9 oxygen
precursor flows in
precursor adsorption
and desorption of reaction products
chamber purge
second precursor flows in
'reaction with the adsorbed layer and desorption of reaction products
chamber purge
O      Q      Q      Q      O I
• • • •
.... ^-nononono
thin layer after deposition
I Contact
Core Facility: Nanofabrication and Nanocharacterization Section: Etching & Deposition
Contact person: David Škoda
core.facilitv(5)ceitec.vutbr.cz
Detailed information:
Instrument location:
Brno University ofTechnology Faculty of Mechanical Engineering Department of Physical Engineering Technickä 2896/2, 616 69 Brno Czech Republic
www.ceitec.eu