A Novel Prospective of Molecular Electronics: Electric Field-Controlled Switch, Diode, and Spin- Filter Esmaeil Farajpour Bonab,1 Adam Jaroš,2,3 Michal Straka,3* Cina Foroutan-Nejad1,4* 1 Department of Chemistry, Faculty of Science, Masaryk University, Kamenice 5, Brno, Czech Republic 2 Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences, Flemingovo nám. 2, CZ–16610, Prague, Czech Republic 3 Faculty of Science, Charles University, Albertov 2038/6, Prague 2, 128 43, Czech Republic 4 National Centre for Biomolecular Research, Faculty of Science, Masaryk University, Kamenice 5, 625 00 Brno, Czech Republic ABSTRACT In this work, we suggest a novel single molecular diode with switching and spin-filtering prospective based on an endohedral fullerene, where the triplet-state of a titanium atom, encapsulated inside a C70 fullerene cage, controls switching, rectification, and spin filtering of the species. In order to investigate the switching behavior of the system, we applied external electric fields via two and four electrodes such that the orientation of the enclosed atom inside the cage can be controlled by the orientation of the electric field. Hence, the implemented electrodes can assist the electron transportation through the system in addition to switching the single atom using the applied voltages. Results demonstrate that the applied voltage can significantly decrease the energy barrier between two identical local minima by stabilizing the transition state of the switching process. Besides, density functional theory merged with non-equilibrium Green’s function have been employed to explore spin-filtering and conductivity aspects of the model system. Our results suggest that this system exhibits a significant spin-filtering property as well as a negative differential resistance at low bias voltages. The exceptional properties of the studied system, switching via oriented external electric field and the conductivity with spin-filtering prospective, suggest the potential of this single molecule system in nano-electronics and nano-spintronics applications. REFERENCES 1) Paul, N. D.; Rana, U.; Goswami, S.; Mondal, T. K.; Goswami, S. Azo Anion Radical Complex of Rhodium as a Molecular Memory Switching Device: Isolation, Characterization, and Evaluation of Current–Voltage Characteristics. J. Am. Chem. Soc. 2012, 134 (15), 6520–6523. https://doi.org/10.1021/ja212197s. 2) Goswami, S.; Matula, A. J.; Rath, S. P.; Hedström, S.; Saha, S.; Annamalai, M.; Sengupta, D.; Patra, A.; Ghosh, S.; Jani, H.; Sarkar, S.; Motapothula, M. R.; Nijhuis, C. A.; Martin, J.; Goswami, S.; Batista, V. S.; Venkatesan, T. Robust Resistive Memory Devices Using Solution-Processable Metal- Coordinated Azo Aromatics. Nat. Mater. 2017, 16 (12), 1216–1224. https://doi.org/10.1038/nmat5009. 3) Novák, M.; Foroutan-Nejad, C.; Marek, R. Modulating Electron Sharing in Ion-πReceptors via Substitution and External Electric Field: A Route toward Bond Strengthening. J. Chem. Theory Comput. 2016, 12 (8), 3788–3795. https://doi.org/10.1021/acs.jctc.6b00586. 4) Tawfik, S. A.; Weston, L.; Cui, X. Y.; Ringer, S. P.; Stampfl, C. Near-Perfect Spin Filtering and Negative Differential Resistance in an Fe(II)S Complex. J. Phys. Chem. Lett. 2017, 8 (10), 2189– 2194. https://doi.org/10.1021/acs.jpclett.7b00551. 5) Soler, J. M.; Artacho, E.; Gale, J. D.; García, A.; Junquera, J.; Ordejón, P.; SánchezPortal, D. The SIESTA Method Forab Initioorder-Nmaterials Simulation. J. Phys. Condens. Matter 2002, 14 (11), 2745–2779. https://doi.org/10.1088/0953- 8984/14/11/302.