See discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/243455203 Band Structure and Optical Properties of Diamond Article  in  Physical Review Letters · September 1968 DOI: 10.1103/PhysRevLett.21.715 CITATIONS 30 READS 234 3 authors, including: Thomas Bergstresser University of California, Berkeley 20 PUBLICATIONS   2,539 CITATIONS    SEE PROFILE All content following this page was uploaded by Thomas Bergstresser on 25 May 2016. The user has requested enhancement of the downloaded file. VOI.UME 16, NUMBER 9 PHYSICAL REVIEW LETTERS 28 I'"EBRUARY 1966 =d. In this respect, it might be interesting to see if Al-A10+-Ag/In/Ag diodes (with relatively thin silver films) produce significantly sharper structure in analogy to multiple-beam interferometers, i.e., two silver mirrors rather than one. The present model proposes e-e (or h-h) composite states into which electrons (or holes) tunnel preferentially because such states satisfy a macroscopic quantum condition of the "beat" or envelope" momentum &P = (2w/ d)qh. This point of view seems to differ significantly from the physical picture underlying the McMillan-Anderson calculation, although both yield the same energy spectrum. There appears to be some reason to believe that simultaneous solutions of the three-dimensional Gor'kov equations (lamina of thickness d) may lead to a regime qualitatively similar to the one dis- cussed. The authors are indebted to G. W. Lehman for valuable discussions, and to R. R. Hargrove for preparing the diodes studied. *Work supported by the Division of Research, Metallurgy and Materials Programs, U. S. Atomic Energy Commission, under Contract No. AT-(11-1)-GEN-8. ~W. J. Tomasch, Phys. Rev. Letters 16, 16 (1966). 2W. J. Tomasch, Phys. Rev. Letters 15, 672 (1965). W. L. McMillan and P. W. Anderson, Phys. Rev. Letters 16, 85 (1966). 4The fact that the single atypical structural feature exhibited by the thinner In films of Ref. 1 could be incorporated into the main series by plotting e&(q) was first pointed out in Ref. 3. 5J. R. Schrieffer, Rev. Mod. Phys. 36, 200 (1964). J. Bardeen, L. N. Cooper, and J. R. Schrieffer, Phys. Rev. 108, 1175 (1957). 7P. N. Dheer, Proc. Roy. Soc. (London) A260, 333 (1961). Although the choice of nodes at the surface has a certain appeal, this condition is not mandatory. Alternative boundary conditions can produce the same spec- trum. ~T. Wolfram and G. W. Lehman, to be published. BAND STRUCTURE AND OPTICAL PROPERTIES OF DIAMOND* W. Saslow, t T. K. Bergstresser, and Marvin I . Cohen) Department of Physics, University of California, Berkeley, California (Received 27 January 1966) Recently several authors' ' have discussed new measurements of the optical properties of diamond, and they have raised many questions about the measurements and about the theoretical interpretation of the data. To answer a few of these questions, we present in this Letter a calculation of the electronic band structure of diamond. The band structure was calculated by means of the empirical pseudopotential method (EPM)'~' which has been used' ' successfully to interpret the optical properties of a large number of semiconductors and insulators. The analysis of the resulting diamond band structure yields some new interpretation of the structure in the optical reflectivity. Within the scope of this interpretation, the calculated band gaps agree with experiment to within -0.01 Ry near the fundamental band gap and to within -0.05 Ry over a range of 1.0 Ry. The EPM involves choosing pseudopotential form factors which give band structures consistent with the experimental measurements. These form factors are first constrained to give a few of the principal band gaps in agreement with experiment and then used to determine the electronic band structure at many points in the Brillouin zone. The pseudopotential form factors V~ used for diamond are (in Rydbergs) V,~, = —0.811, V»o -—0.337, V», =0.132, and V„,=0.041. The V„,form factor, which is identically zero for a linear superposition of spherical atomic potentials, is included here to account for the distribution of valence charge'~" arising from tetrahedral bonding. This tetrahedral distribution of charge accounts for the presence of the otherwise forbidden (222) reflection in x-ray data "~" The band structure of diamond appears in Fig. 1. The calculation of the energy bands is convergent to -0.003 Ry. The lattice constant was taken to be 3.57 A." In Table I we list the principal energy gaps of this band structure and the corresponding experimental values. The location of the conductionband minimum is also included in Table I. The error in the experimental energies at which the peaks occur in the optical constants is large both because of the inherent broadness of the 354 V&&UME 16, +UMBER 9 PH YSICAL RE VIE%' LETTERS 28 FEBRUARY 1966 20 10 Table I. Theoretical and experimental values for the location of the conduction band minimum and the principal band gaps of diamond. Except for the I"25~- 4& gap which was determined using absorption measurements, all experimental splittings were obtained only from plots of the imaginary part of the frequency dependent dielectric function. Theory (eV)a Experiment (eV)a 0 —10 +minimum I'25'-&~ I'25'-I'i5 X4-Xg Ig-I g I'25'-I'~2 (o.vv, o, o) 5 4 7.3 12.9 10.9 16.5 (o.v6+.o2, o, o)b 5.48c 7 3d, e 9.5-10.5 16-1Vf e —20 —30 ~ (~/2 t/2 ~/2) I' = —(0,0,0) X = —(1,0,0) aExcept for &minimum bP. J.Dean, E. C. Lightowlers, and D. R. Wright, Phys. Rev. 140, A352 (1965). C. D. Clark, P. J.Dean, and P. V. Harris, Proc. Roy. Soc. (London) A277, 312 (1964); C. D. Clark, J. Phys. Chem. Solids 8, 481 (1959). Ref. 2. Ref. 4. fRef. 1. FIG. 1. The electronic band structure of diamond. structure and because of the broadness and shifts introduced by the Kramers-Kronig transformations of the data. The agreement between theory and experiment is very good, especially when one notes that the gaps are large and the errors in these gaps are a small percentage of the total splitting. The most prominent peak in the reflectivity spectrum is associated, as in other semiconductors and insulators having the diamond structure, with the X4-X~ transition. The theoretical X4-X, splitting appears to be 0.3-0.6 eV too large. Since this transition may itself constitute only a nominal part of the optical structure around this peak, as in Si,"a density of states or e, calculation may be necessary to fix this energy difference more precisely. The structure in the 16- to 17-eV range was previously assigned'&' to the L point in the zone. As is shown in Fig. 1, the L splittings are lower in energy and the only ostensible candidate for this transition is r„-r»i, we tentatively make this assignment. The L,I-L, transition is assumed to give rise to the hump-like structure in the experimental spectrum'~'~4 at 9.5- 10.5 eV. The L,I-L, transition, which lies higher in energy, is most likely masked by the X4X~ peak. We assign the first direct threshold to r»II j, and put this edge at 7~ 3 eV . Some me asurements ' have revealed that the structure near this threshold appears to be very sensitive to temperature, and this sensitivity has stimulated interpretation of the optical structure in terms of hybrid excitons. ' We presume that further study of this region is warranted. At present we cannot predict the form of the I"25/ ry, peak or its temperature dependence since there are several critical points in this region which may give rise to optical fine structure and these critical points are very sensitive to the choice of form factors. In addition, our calculation is not sufficiently accurate to confirm the existence of hybrid excitons, but our assignment of the I"»~ ry5 edge -7.3 eV restricts the size and shape of the proposed exciton. The I'»iI'» edge cannot be raised without moving the &, minimum closer to the X point unless the X4-X, splitting is made larger than 13 eV. We have forced the conduction-band minimum to agree with the value obtained by Dean et al." If this constraint is relaxed and ~~ is moved out beyond (0.80, 0, 0), only then can the I'»~ry5 gap be increased beyond 8 eV for a fixed X4-Xq splitting. The dependence of the principal gaps on the values of the form factors is 355 VOLUME 16,NUMBER 9 PHYSICAL REVIEW LETTERS 28 I'EBRUARV 1966 V1ii V22o Vsri V222 I'25' -I'i5 I'2s' -I'i2' X4-Xg I'25I -Xg L3'-L g —0.116 -0.132 -0.094 -0.154 -0.018 -0.052 -0.162 0.018 -0.012 0.192 0.222 -0.190 0.176 0.274 0.258 -0.265 -0.154 -0.102 -0.206 —0.152 given in Table II. The simplicity of the (1s)' cores of carbon have inspired orthogonalized plane-wave" band calculations, but it was not obvious a priori that the EPM method would be successful for diamond. The success of this method presumably relies on the applicability of the Phillips cancellation theorem. "However, the absence of P core states mea. ns that the kinetic energy of the valence P electrons is not cancelled. " The apparent success of the EPM method for diamond probably arises from the fact that the valence P states have small probability of being in the core because of the form of the p wave function, and therefore complete cancellation is not imperative for these states. One of us (MLC) benefitted from conversa. tions with Dr. Frank Herman and Professor J. C. Phillips. *Work supported by the National Science Foundation. )National Science Foundation Predoctoral Fellow. f.Alfred P. Sloan Fellow. Table II. The change of the principal energy gaps in eV for a change in form factor of +0.01 Ry. ~W. C. Walker and J. Osantowski, Phys. Rev. 134, A153 (1964). H. R. Philipp and E.A. Taft, Phys. Rev. 136, A1445 (1964); 127, 159 (1962). J.C. Phillips, Phys. Rev. 139, A1291 (1965). 4D. M. Roessler, thesis, University of London, 1966 (unpublished). 5M. L. Cohen and T. K. Bergstresser, Phys. Rev. 141, 789 (1966). 6J. C. Phillips, Phys. Rev. 112, 685 (1958); D. Brust, J. C. Phillips, and F. Bassani, Phys. Rev. Letters 9, 94 (1962); D. Brust, M. L. Cohen, and J.C. Phillips, Phys. Rev. Letters 9, 389 (1962); D. Brust, Phys. Rev. 134, A1337 (1964). T. K. Bergstresser, M. L. Cohen, and E. W. Williams, Phys. Rev. Letters 15, 662 (1965). M, L. Cohen and J.C. Phillips, Phys. Rev. 139, A912 (1965). ~L. Kleinman and J. C. Phillips, Phys. Rev. 125, 819 (1962). ~OK. H. Bennemann, Phys. Rev. 133, A1045 (1964). M. Renninger, Z. Krist. 97, 107 (1937). ~2M. Renninger, Acta Cryst. 8, 606 (1955). ~3R. W. G. Wyckoff, Crystal Structures (Interscience Publishers, New York, 1963). E. O. Kane, to be published. ~ C. D. Clark, P. J.Dean, and P. V. Harris, Proc. Roy. Soc. (London) A277, 312 (1964); C. D. Clark, J. Phys. Chem. Solids 8, 481 (1959). ~GP. J.Dean, E. C. Lightowlers, and D. R. Wright, Phys. Rev. 140, A352 (1965). ~YF. Herman, Phys. Rev. 93, 1214 (1954); Proceedings of the International Conference on the Physics of Semiconductors, Paris (Dunod, Paris, 1964), p. 3. ~ P. W. Anderson, Concepts in Solids (W. A. Benjamin, Inc. , New York, 1963), p. 66. ~SL. Kleinman and J. C. Phillips, Phys. Rev. 116, 880 (1959). RICHARDSON-SCHOTTKY EFFECT IN INSULATORS* P. R. Emtage and J.J.O'Dwyerf Westinghouse Research Laboratories, Pittsburgh, Pennsylvania (Received 31 January 1966) The Richardson-Schottky formula for thermionic emission from a metallic cathode into the conduction band of an insulator is frequently' stated as 4vem(aT)' -(y, ay)/aT—J, e field strength immediately in front of the cathode. It has recently been pointed out by Simmons' that this expression is invalid when the mobility of the electrons in the dielectric is low, for if one determines the density of current carriers in the insulator, n, from the relationship In this expression yo is the work function, and the Schottky term is given by ay =(e'I' /e)'", C where e is the dielectric constant, and F~ the J=ne pI', (3) one may then find that n becomes so large that back-diffusion from the dielectric to the metal will occur. Unfortunately Simmons's discus- 356 VOLUME 21, NUMBER 10 PHYSICAL REVIEW LETTERS 2 SEP/EMBER 1968 ERRATA BAND STRUCTURE AND OPTICAL PROPERTIES OF DIAMOND. W. Saslow, T. K. Bergstresser, and Marvin L. Cohen [Phys. Rev. Letters 16, 354 (1966)]. Three points in Fig. 1 were drafted 1 eV too high. They are the I » point in the conduction band, and the two adjacent points along the A line. A correct picture of the band structure is given in Fig. 1 of Luis R. Saravia and D. Brust, Phys. Rev. 170, 683 (1968). RECENT p-PRODUCTION EXPERIMENTS AND THE PREDICTIONS OF CHILL SYMMETRY. D. A. Geffen and T. Walsh [Phys. Rev. Letters 20 1536 (1968)]. The following additions in proof to Refs. 1 and 3 were inadvertently omitted. Reference 1: See also J. Schwinger, Phys. Rev. 167, 1546 (1968), for a similar analysis of the Novosibirsk data. Reference 3: R. Arnowitt, M. H. Friedman, and P. Nath, Phys. Rev. Letters 19 1085 (1967). It is worth mentioning that the latter authors were the first to note in print the possibility of a virtual p-mass dependence of the pnm vertex following from an effective Lagrangian. TEST OF THE &S=&Q RULE IN LEPTONIC DECAYS OF NEUTRAL E MESONS. Bryan R. Webber, Frank T. Solmitz, Frank S. Crawford, Jr., and Margaret Alston-Garnjost [Phys. Rev. Letters 21 498 (1968)]. In the abstract, "Im(~) = -0.88+0.08" should be replaced by "Im(x) = -0.08 +0.08." In the fourth line of the second column of p. 498, "four-constant" should be "four-constraint. " The second sentence after Eq. (7) should read, "They are also insensitive to our choice for t5 t." View publication statsView publication stats